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INTEGRATED CIRCUITS
DATA SHEET
TEA5551T 1-chip AM radio
Product specification File under Integrated Circuits, IC01 October 1990
Philips Semiconductors
Product specification
1-chip AM radio
GENERAL DESCRIPTION
TEA5551T
The TEA5551T is a 1-chip monolithic integrated radio circuit which is designed for use as a pocket receiver with headphones in a supply voltage range (VS) of 1.8 V to 4.5 V. The circuit consists of a complete AM part and dual AF amplifier with low quiescent current. The AF part has low radiation (HF noise) and good overdrive performance. The dual AF amplifier makes the device suitable for operation in an AM/FM stereo receiver with or without stereo cassette player. The IC has a 1-pin switch for AM or other applications. Features * Low voltage operation (VS = 1.8 V to 4.5 V) * Low current consumption (Itot = 5 mA at VS = 3 V) * All pins provided with ESD protection AM part * High sensitivity (Vi = 1.5 V for Vo = 10 mV) * Good IF suppression * Good signal handling (Vi(max) = 80 mV) * Switch for AM or other applications * Short waveband (> 40 MHz) AF part * A fixed integrated gain of 32 dB * Few external components required * Very low quiescent current * Low HF radiation and good AF overdrive performance * 0 to 20 kHz limited frequency response * 25 mW per channel output power in 32
October 1990
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Philips Semiconductors
Product specification
1-chip AM radio
QUICK REFERENCE DATA (at Tamb = 25 C) PARAMETER Supply voltage Supply current AM part RF sensitivity RF input voltage Vo(AF) = 10 mV S/N = 26 dB S/N = 50 dB AF output voltage Total harmonic distortion Signal handling capability AF part Output power at VS = 3.0 V at VS = 4.5 V Voltage gain Channel separation Po = 10 mW 1 kHz Vi(RF) = 1 mV Vi(RF) = 100 V to 30 mV m = 0.8; THD = 10% both channels driven RL = 32 ; THD = 10% Po Po Gv - - - - 25 60 32 50 - - - - Vi(RF) Vi(RF) Vi(RF) Vo(AF) THD Vi(RF) - - - - - - 1.5 15 10 80 0.8 80 - - - - - - m = 0.3 CONDITIONS SYMBOL VS I5 + I10 MIN. 1.8 - TYP. 3.0 6
TEA5551T
MAX. 4.5 - V
UNIT
mA
V V mV mV % mV
mW mW dB dB
PACKAGE OUTLINE 16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 July 25.
October 1990
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1-chip AM radio TEA5551T
Philips Semiconductors
Product specification
1-chip AM radio
PINNING 1 2 3 4 5 6 7 8 AM GND AM mixer output AM AGC AM-IF input AM supply voltage (VP) AF + input amplifier 1 AF GND AF output amplifier 1 9 10 11 12 13 14 15 16 AF output amplifier 2 AF supply voltage (VS) AF + input amplifier 2 AF - input amplifier 1 AM detector output AM oscillator AM-RF input AM-RF input
TEA5551T
Fig.2 All pins provided with ESD protection diodes to substrate.
October 1990
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Philips Semiconductors
Product specification
1-chip AM radio
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER Supply voltage Supply current (peak) Crystal temperature Short-circuit protection Total power dissipation Storage temperature range Operating ambient temperature range VS = 4.5 V CONDITIONS SYMBOL VS IM Tc tsc Ptot Tstg Tamb -65 -25 - - - - MIN. 6
TEA5551T
MAX. V 150 150 5
UNIT mA C s C C
see Fig.3 +150 +60
QUALITY In accordance with UZW-BO/FQ-0601. Operating life endurance verified 2000 hours at Tj = 85 C. The product meets the 600 V ESD on all pins (HBM specification UZW-BO/FQ-A302). THERMAL RESISTANCE From junction to ambient Rth j-a = 110 K/W
Fig.3 Power derating curve.
October 1990
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Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
DC CHARACTERISTICS All voltages are referenced to pin 1 and pin 7; all input currents are positive; all parameters are measured in test circuit of Fig.6 at VS = 3 V; Tamb = 25 C unless otherwise specified PARAMETER Supply voltage Voltages pin 5 pin 10 HF part Total current consumption (pin 5) Oscillator current (pin 14) Mixer current (pin 2) Voltages pin 3 pin 13 pin 15 pin 16 AF part Total current consumption (pin 10) Input bias current (pin 11 connected to pin 16) DC output voltage pin 8 pin 9 V8 V9 - 1.5 1.5 - - V V I11 + I16 - 40 - nA I5 - 4.0 - mA V3 V13 V15 V16 - - - - 150 600 1.1 1.1 - - - - mV mV V V I5 I14 I2 - - - 2.2 100 200 - - - mA A A V5 V10 1.6 1.8 2.8 3.0 4.3 4.5 V V SYMBOL VS 1.8 MIN. 3.0 TYP. 4.5 MAX. V UNIT
October 1990
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Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
AC CHARACTERISTICS All parameters are measured in test circuit of Fig.6 at VS = 3 V; Tamb = 25 C unless otherwise specified. RF conditions: Input frequency 1 MHz; 30% modulation where fmod = 1 kHz; unless otherwise specified. PARAMETER RF sensitivity RF input voltage Loss in sensitivity Noise Signal-to-noise ratio for RF input signal voltage of Vi(RF) = 2 V Vi(RF) = 15 V Vi(RF) = 1 mV AF output voltage Vi(RF) = 1 mV Vi(RF) = 1 mV; VS = 1.8 V Total harmonic distortion Vi(RF) = 100 V to 30 mV Vi(RF) = 80 mV; m = 0.8 AGC range Change in RF input voltage for 10 dB change in AF output voltage Optimum source impedance IF suppression at Vo(AF) = 10 mV Oscillator (pin 14) Oscillator voltage V5 = 1.5 V Note to the AC characteristics 1. V i at f i = 468 kHz = ---------------------------------------------V i at f i = 1 MHz note 1 fosc = 1468 kHz Vi Vi - - 100 * - - mV mV - 20 - dB Vi(RF1) = 50 mV Vi(RF1)/ Vi(RF2) Zsource - - 86 3 - - dB k THD - 10 - % THD - 0.8 - % Vo(AF) - 55 - mV Vo(AF) - 80 - mV S/N S/N S/N - - - 6 26 46 - - - dB dB dB Vo(AF) = 10 mV Vo(AF) = 10 mV; VS = 1.8 V Vi(RF) - 6 - dB Vi(RF) - 1.5 - V CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
* Value to be fixed. October 1990 8
Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
AC CHARACTERISTICS All parameters are measured in test circuit of Fig.6 at VS = 3 V; Tamb = 25 C unless otherwise specified. RF conditions: f = 1 kHz; RL = 32 ; unless otherwise specified. PARAMETER Output power THD = 10% THD = 10%; VS = 1.8 V THD = 10%; VS = 4.5 V Total harmonic distortion Voltage gain Noise Noise output voltage HF noise output voltage Input circuit Input impedance Mute switch AC impedance (pin 13 to ground) V5 = 0 V; I13 = 0.32 mA RS - 200 - pin 11 connected to pin 12 Zi - 3 - M RS = 5 k; B = 15 kHz RS = 5 k; B = 5 kHz; f = 500 kHz Vno(RF) - 20 - V Vno - 240 - V Po = 10 mW Po = 10 mW Po Po Po THD Gv - - - - - 25 8 60 0.5 32 - - - - - mW mW mW % dB CONDITIONS SYMBOL MIN. TYP. MAX. UNIT
October 1990
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Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
Conditions: fo = 1 MHz; fm = 1 kHz; VS = 3 V; Rg = 50 ; m = 0.3 (unless otherwise specified).
Fig.4
Typical signal (S) and noise (N) output voltages, where Vo is the AF output voltage at pin 13, as a function of the input voltage Vi. Vi is the input voltage at pin 16. Also shown is the total harmonic distortion (THD).
Conditions: VS = 3 V and 4.5 V; RL = 32 ; f = 1 kHz.
Fig.5
Total distortion (dtot) as a function of output power (Po).
October 1990
10
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1-chip AM radio TEA5551T
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... October 1990 12 Product specification Coil data: L1 L2 L3 7MCS2199 7MCS2197 7BRS10869X Fig.7 Application circuit. APPLICATION INFORMATION Philips Semiconductors
1-chip AM radio TEA5551T
Philips Semiconductors
Product specification
1-chip AM radio
COIL DATA AM coils (Figs 6 and 7)
TEA5551T
Fig.8 IF bandpass filter (L1). TOKO sample no. 7MCS2199.
Fig.9 IF bandpass filter (L2). TOKO sample no. 7MCS2197.
October 1990
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Philips Semiconductors
Product specification
1-chip AM radio
TEA5551T
Fig.10 Oscillator coil (L3). TOKO sample no. 7BRS10869X.
October 1990
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Philips Semiconductors
Product specification
1-chip AM radio
PACKAGE OUTLINE SO16: plastic small outline package; 16 leads; body width 3.9 mm
TEA5551T
SOT109-1
D
E
A X
c y HE vMA
Z 16 9
Q A2 A1 pin 1 index Lp 1 e bp 8 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 10.0 9.8 E (1) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 0.039 0.016 Q 0.7 0.6 0.028 0.020 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3
0.010 0.057 0.069 0.004 0.049
0.019 0.0100 0.39 0.014 0.0075 0.38
0.244 0.050 0.041 0.228
0.028 0.004 0.012
8 0o
o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT109-1 REFERENCES IEC 076E07S JEDEC MS-012AC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-23 97-05-22
October 1990
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Philips Semiconductors
Product specification
1-chip AM radio
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end.
TEA5551T
During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
October 1990
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Philips Semiconductors
Product specification
1-chip AM radio
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA5551T
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1990
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